Talal Mohammed Al tahtamouni
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Selected Publication
Enhancement of thermoelectric properties of low-toxic and earth-abundant Copper Selenide thermoelectric material by microwave annealing
Farheen F Jaldurgam, Zubair Ahmad, Farid Touati, Abdulla Al Ashraf, Abdul Shakoor, Jolly Bhadra, Noora J Al-Thani, Talal Altahtamouni
Journal of Alloys and Compounds
Recent advances in WS2 and its based heterostructures for water-splitting applications
Zeineb Thiehmed, Abdul Shakoor, Talal Altahtamouni
Catalysts 2021, 11(11), 1283
Optimum sintering method and temperature for cold compact Bismuth Telluride pellets for thermoelectric applications
Farheen F Jaldurgam, Zubair Ahmad, Farid Touati, Abdulla Al Ashraf, Abdul Shakoor, Jolly Bhadra, Noora J Al-Thani, Dong Suk Han, Talal Altahtamouni
Journal of Alloys and Compounds Volume 877, 160256
Elucidating the mechanism for the chemical vapor deposition growth of vertical MoO2/MoS2 flakes toward photoelectrochemical applications
TranNam Trung, T.M.Al tahtamouni
Applied Surface Science Volume 505, March 2020, 144551
Silicon nanofilms as anode materials for flexible lithium ion batteries
Nasr Bensalah, Fadi Z Kamand, Mustafa Zaghou, Hana D Dawoud, Talal Al Tahtamouni
Thin Solid Films Volume 690, 30 November 2019, 137516
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region
VX Ho, TM Al Tahtamouni, HX Jiang, JY Lin, JM Zavada, NQ Vinh
ACS Photonics, 5 (4), pp 1303–1309, 2018
Influence of TMAl preflow on AlN epitaxy on sapphire
Haiding Sun, Feng Wu, Young Jae Park, TM Al Tahtamouni, Kuang-Hui Li, Nasir Alfaraj, Theeradetch Detchprohm, Russell D Dupuis, Xiaohang Li
Appl. Phys. Lett. 110, 192106, 2017
Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells
T. M. Al tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang
Optical Materials Express Vol. 6, Issue 11, pp. 3476-3481, 2016
Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures
TM Al Tahtamouni, M Stachowicz, J Li, JY Lin, HX Jiang
Appl. Phys. Lett. 106, 121106, 2015
Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes
TM Al Tahtamouni, JY Lin, HX Jiang
AIP Advances 4, 047122, 2014