Enhancement of thermoelectric properties of low-toxic and earth-abundant Copper Selenide thermoelectric material by microwave annealing

Farheen F Jaldurgam, Zubair Ahmad, Farid Touati, Abdulla Al Ashraf, Abdul Shakoor, Jolly Bhadra, Noora J Al-Thani, Talal Altahtamouni
Journal of Alloys and Compounds

Recent advances in WS2 and its based heterostructures for water-splitting applications

Zeineb Thiehmed, Abdul Shakoor, Talal Altahtamouni
Catalysts 2021, 11(11), 1283

Optimum sintering method and temperature for cold compact Bismuth Telluride pellets for thermoelectric applications

Farheen F Jaldurgam, Zubair Ahmad, Farid Touati, Abdulla Al Ashraf, Abdul Shakoor, Jolly Bhadra, Noora J Al-Thani, Dong Suk Han, Talal Altahtamouni
Journal of Alloys and Compounds Volume 877, 160256

Elucidating the mechanism for the chemical vapor deposition growth of vertical MoO2/MoS2 flakes toward photoelectrochemical applications

TranNam Trung, T.M.Al tahtamouni
Applied Surface Science Volume 505, March 2020, 144551

Silicon nanofilms as anode materials for flexible lithium ion batteries

Nasr Bensalah, Fadi Z Kamand, Mustafa Zaghou, Hana D Dawoud, Talal Al Tahtamouni
Thin Solid Films Volume 690, 30 November 2019, 137516

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region

VX Ho, TM Al Tahtamouni, HX Jiang, JY Lin, JM Zavada, NQ Vinh
ACS Photonics, 5 (4), pp 1303–1309, 2018

Influence of TMAl preflow on AlN epitaxy on sapphire

Haiding Sun, Feng Wu, Young Jae Park, TM Al Tahtamouni, Kuang-Hui Li, Nasir Alfaraj, Theeradetch Detchprohm, Russell D Dupuis, Xiaohang Li
Appl. Phys. Lett. 110, 192106, 2017

Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

T. M. Al tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang
Optical Materials Express Vol. 6, Issue 11, pp. 3476-3481, 2016

Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures

TM Al Tahtamouni, M Stachowicz, J Li, JY Lin, HX Jiang
Appl. Phys. Lett. 106, 121106, 2015

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

TM Al Tahtamouni, JY Lin, HX Jiang
AIP Advances 4, 047122, 2014